IRFR4105 International Rectifier, IRFR4105 Datasheet - Page 7
![MOSFET N-CH 55V 27A DPAK](/photos/5/41/54121/21-dpak_to-225aa_sml.jpg)
IRFR4105
Manufacturer Part Number
IRFR4105
Description
MOSFET N-CH 55V 27A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR4105.pdf
(11 pages)
Specifications of IRFR4105
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
68W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR4105
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Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
= 5V for Logic Level Devices
SD
DS
Waveform
Waveform
Fig 14. For N-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
Diode Recovery
SD
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Ground Plane
Current Transformer
Low Stray Inductance
Low Leakage Inductance
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
IRFR/U4105
7