IRFR4105 International Rectifier, IRFR4105 Datasheet - Page 4

• Manufacturer Part Number: IRFR4105
• Description: MOSFET N-CH 55V 27A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR4105

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR4105

IRFR/U4105
4
1 0 0 0
1 2 0 0
1 0 0 0
1 0 0
8 0 0
6 0 0
4 0 0
2 0 0
1 0
1
0
0.4
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
C
C
C
T = 17 5°C
V
V
Drain-to-Source Voltage
o ss
iss
J
rss
S D
D S
Forward Voltage
0.8
V
C
C
C
, S ourc e-to-D rain V oltage (V )
, D rain-to-S ourc e V oltage (V )
G S
is s
rs s
o s s
= 0 V ,
= C
= C
= C
T = 25 °C
g s
g d
d s
J
1.2
+ C
+ C
1 0
g d
g d
f = 1 M H z
, C
d s
1.6
S H O R TE D
V
G S
= 0V
1 0 0
2.0
A
A
1 0 0 0
1 0 0
2 0
1 6
1 2
1 0
8
4
0
1
Fig 8. Maximum Safe Operating Area
0
1
I
T
T
S ing le P u lse
D
Fig 6. Typical Gate Charge Vs.
C
J
= 16 A
= 25 °C
= 17 5°C
O P E R A TIO N IN TH IS A R E A L IM ITE D
Gate-to-Source Voltage
V
Q , T otal G ate C h arge (n C )
D S
1 0
G
, D rain-to-S ource V oltage (V )
B Y R
V
V
1 0
2 0
D S
D S
D S (o n)
= 4 4 V
= 2 8 V
FO R TE S T C IR C U IT
S E E F IG U R E 1 3
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3 0
1 0 0 µ s
1 0 µ s
1 m s
1 0 0
4 0
A
A