IRF520N International Rectifier, IRF520N Datasheet - Page 6

• Manufacturer Part Number: IRF520N
• Description: MOSFET N-CH 100V 9.7A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF520N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF520N

IRF520N
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
10 V
V
V
I
G
AS
DS
Q
GS
10 V
R
G
V
t
DS
p
Q
Charge
Q
GD
G
t
p
I
D.U.T.
AS
L
0.01
V
(BR)DSS
+
V
-
V
DD
DD
2 0 0
1 6 0
1 2 0
8 0
4 0
Fig 13b. Gate Charge Test Circuit
Fig 12c. Maximum Avalanche Energy
0
2 5
V
D D
S tarting T , J unc tion T em perature (°C )
12V
= 25 V
V
5 0
GS
Vs. Drain Current
Same Type as D.U.T.
Current Regulator
.2 F
J
7 5
50K
3mA
Current Sampling Resistors
1 0 0
.3 F
I
G
1 2 5
TO P
B O TTO M
D.U.T.
I
D
1 5 0
4.0 A
5 .7A
2 .3 A
I
+
-
V
D
DS
1 7 5
A