IRF520N International Rectifier, IRF520N Datasheet - Page 2

• Manufacturer Part Number: IRF520N
• Description: MOSFET N-CH 100V 9.7A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF520N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF520N

IRF520N
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
V
fs
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
V
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
DD
G
= 25 , I
= 25V, starting T
/ T
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
AS
= 5.7A. (See Figure 12)
J
= 25°C, L = 4.7mH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
I
Pulse width
T
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
SD
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
2.7
–––
–––
–––
–––
–––
–––
J
175°C
5.7A, di/dt
0.11 –––
–––
–––
––– 0.20
–––
–––
–––
–––
––– -100
–––
–––
–––
330
–––
–––
–––
390
4.5
4.5
54
23
32
23
7.5
92
99
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
150
580
4.0
300µs; duty cycle
4.8
1.3
25
25
11
9.7
38
240A/µs, V
V/°C
µA
nH
nA
nC
ns
pF
nC
ns
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
DD
= 5.7A
= 5.7A
= 25°C, I
= 25°C, I
= 8.6
= 22
= 0V, I
= 10V, I
= V
= 50V, I
= 100V, V
= 80V, V
= 20V
= -20V
= 80V
= 10V, See Fig. 6 and 13
= 0V
= 25V
= 50V
2%.
V
GS
(BR)DSS
, I
D
See Fig. 10
S
F
D
D
D
Conditions
= 250µA
Conditions
GS
= 5.7A, V
= 5.7A
= 250µA
= 5.7A
= 5.7A
GS
,
= 0V, T
= 0V
D
= 1mA
GS
J
= 150°C
G
= 0V
G
S
D
S
D