PHU77NQ03T,127 NXP Semiconductors, PHU77NQ03T,127 Datasheet
PHU77NQ03T,127
Specifications of PHU77NQ03T,127
PHU77NQ03T
PHU77NQ03T
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PHU77NQ03T,127 Summary of contents
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PHD/PHU77NQ03T N-channel TrenchMOS FET Rev. 01 — 28 November 2006 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features I Fast switching 1.3 Applications I DC-to-DC converters 1.4 ...
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... NXP Semiconductors 3. Ordering information Table 2. Ordering information Type number Package Name PHD77NQ03T DPAK PHU77NQ03T IPAK 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage (DC) DGR V gate-source voltage GS I drain current ...
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... NXP Semiconductors 120 P der (%) 100 P tot P = ----------------------- - 100 % der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature Limit (A) DSon single pulse mb DM Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PHD_PHU77NQ03T_1 Product data sheet ...
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... NXP Semiconductors 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter R thermal resistance from junction to mounting base see th(j-mb) R thermal resistance from junction to ambient th(j-a) SOT428 SOT533 [1] Mounted on a printed-circuit board; vertical in still air th(j-mb) (K/W) 1 0.5 0.2 0.1 0. 0.02 single pulse -2 10 ...
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... NXP Semiconductors 6. Characteristics Table 5. Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage GS(th) I drain leakage current DSS I gate leakage current GSS R gate resistance G R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge ...
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... NXP Semiconductors 0.2 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values ( 150 and 175 Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values PHD_PHU77NQ03T_1 Product data sheet 003aab285 5.6 5.2 4.8 4.4 4 3.8 0.6 0.8 ...
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... NXP Semiconductors 4 V GS(th) (V) max 3 typ min - mA Fig 9. Gate-source threshold voltage as a function of junction temperature ( and Fig 11. Gate-source voltage as a function of gate charge; typical values PHD_PHU77NQ03T_1 Product data sheet 003aab303 (A) 120 180 Fig 10. Sub-threshold drain current as a function of 003aab288 (nC) G Fig 12. Gate charge waveform definitions Rev. 01 — ...
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... NXP Semiconductors ( 150 C 0 0.2 0.4 0 and 175 Fig 13. Source current as a function of source-drain voltage; typical values MHz GS Fig 15. Input and reverse transfer capacitances as a function of gate-source voltage; typical values PHD_PHU77NQ03T_1 Product data sheet 003aab289 (pF 0.8 1 1 Fig 14. Input, output and reverse transfer capacitances ...
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... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions) UNIT 2.38 0.93 0.89 1.1 mm 2.22 0.46 0.71 0.9 OUTLINE VERSION IEC SOT428 Fig 16. Package outline SOT428 (DPAK) PHD_PHU77NQ03T_1 Product data sheet mounting ...
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... NXP Semiconductors Plastic single-ended package (IPAK); 3 leads (in-line DIMENSIONS (mm are the original dimensions) UNIT 2.38 0.93 0.89 0.56 1.10 mm 2.22 0.46 0.71 0.46 0.96 Notes 1. Basic spacing between centers. 2. Terminal dimensions are uncontrolled within zone L OUTLINE VERSION IEC SOT533 Fig 17. Package outline SOT533 (IPAK) ...
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... NXP Semiconductors 8. Revision history Table 6. Revision history Document ID Release date PHD_PHU77NQ03T_1 20061128 PHD_PHU77NQ03T_1 Product data sheet PHD/PHU77NQ03T Data sheet status Change notice Product data sheet - Rev. 01 — 28 November 2006 N-channel TrenchMOS FET Supersedes - © NXP B.V. 2006. All rights reserved ...
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... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...
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... NXP Semiconductors 11. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Legal information 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 9.2 Defi ...