PHP110NQ08T,127 NXP Semiconductors, PHP110NQ08T,127 Datasheet - Page 5

• Manufacturer Part Number: PHP110NQ08T,127
• Description: MOSFET N-CH 75V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHP110NQ08T,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 113.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 4860pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058275127; PHP110NQ08T; PHP110NQ08T

NXP Semiconductors
6. Characteristics
Table 6.
PHP110NQ08T_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
I
T
V
T
V
R
I
see
I
V
D
D
D
D
D
D
S
S
j
j
DS
DS
GS
GS
GS
GS
DS
DS
G(ext)
DS
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 25 °C; see
= 25 °C; see
= 25 A; V
= 20 A; dI
Figure 8
Figure 8
Figure 8
Figure 9
Figure 9
Figure 13
= 75 V; V
= 75 V; V
= 25 V; V
= 30 V; R
= 25 V; T
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 5.6 Ω; T
Rev. 02 — 12 October 2009
GS
DS
S
DS
DS
DS
D
D
and
and
/dt = -100 A/µs; V
j
GS
GS
GS
DS
L
GS
GS
DS
= 25 °C
= 25 A; T
= 25 A; T
= 60 V; V
= 0 V; T
= V
= V
= V
Figure 11
Figure 12
= 1.2 Ω; V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
j
= 0 V; T
= 0 V; T
10
10
= 0 V; T
= 25 °C
GS
GS
GS
; T
; T
; T
j
= 25 °C;
j
j
j
j
j
GS
j
j
j
= 175 °C;
= -55 °C;
= 25 °C;
= 175 °C;
= 25 °C;
j
j
j
GS
= 25 °C
= 175 °C
= 25 °C
= -55 °C
= 25 °C
= 25 °C
= 10 V;
= 10 V;
GS
= 0 V;
N-channel TrenchMOS standard level FET
PHP110NQ08T
Min
70
75
1
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3
-
-
2
2
16.2
7.7
113.1
18.5
48.2
4860
840
475
35
107
183
100
0.82
75
270
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
4.4
4
10
500
100
100
18.9
9
-
-
-
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
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