PHB108NQ03LT,118 NXP Semiconductors, PHB108NQ03LT,118 Datasheet
PHB108NQ03LT,118
Specifications of PHB108NQ03LT,118
PHB108NQ03LT /T3
PHB108NQ03LT /T3
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PHB108NQ03LT,118 Summary of contents
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PHB108NQ03LT N-channel TrenchMOS logic level FET Rev. 04 — 2 February 2009 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...
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... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain [ not possible to make a connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description PHB108NQ03LT D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one ...
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... NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage DGR V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot T storage temperature stg ...
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... NXP Semiconductors 120 I der (%) 100 Fig 1. Normalized continuous drain current as a function of mounting base temperature Limit DSon Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PHB108NQ03LT_4 Product data sheet 03ar58 120 P der (%) 150 200 0 ( ° C) ...
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... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-a) junction to ambient R thermal resistance from th(j-mb) junction to mounting base 1 δ = 0.5 Z th(j-mb) (K/W) 0.2 0 0.05 0.02 single pulse - Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration ...
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... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance R internal gate resistance G (AC) Dynamic characteristics Q total gate charge G(tot) Q gate-source charge ...
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... NXP Semiconductors Table 6. Characteristics …continued Symbol Parameter t turn-on delay time d(on) t rise time r t turn-off delay time d(off) t fall time f Source-drain diode V source-drain voltage SD t reverse recovery time rr Q recovered charge 4 0.2 0.4 0.6 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values ...
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... NXP Semiconductors 4000 C (pF) 3000 2000 1000 Fig 7. Input and reverse transfer capacitances as a function of gate-source voltage; typical values - ( min typ - Fig 9. Sub-threshold drain current as a function of gate-source voltage PHB108NQ03LT_4 Product data sheet 03ar67 2.5 V GS(th) (V) C iss 2 1.5 C rss 1 0.5 ...
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... NXP Semiconductors 2 a 1.5 1 0 Fig 11. Normalized drain-source on-state resistance factor as a function of junction temperature GS(pl) V GS(th GS1 GS2 G(tot) Fig 13. Gate charge waveform definitions PHB108NQ03LT_4 Product data sheet 03af18 ( 120 180 T (°C) j Fig 12. Gate-source voltage as a function of gate charge; typical values ...
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... NXP Semiconductors Fig 15. Source current as a function of source-drain voltage; typical values PHB108NQ03LT_4 Product data sheet ( 175 ° ° 0.2 0.4 0.6 0.8 Rev. 04 — 2 February 2009 PHB108NQ03LT N-channel TrenchMOS logic level FET 03ar65 1 1.2 V (V) SD © NXP B.V. 2009. All rights reserved. ...
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... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions) UNIT 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 OUTLINE VERSION IEC SOT404 Fig 16. Package outline SOT404 (D2PAK) PHB108NQ03LT_4 Product data sheet 2.5 ...
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... Product data sheet Change notice Product data sheet - • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. Product data sheet 2004070095 Product data ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 9 Legal information .13 9.1 Data sheet status ...