PSMN009-100W,127 NXP Semiconductors, PSMN009-100W,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN009-100W,127
• Description: MOSFET N-CH 100V 100A SOT429
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN009-100W,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 214nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055801127; PSMN009-100W; PSMN009-100W

Philips Semiconductors
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
October 1999
N-channel TrenchMOS
SYMBOL PARAMETER
I
I
V
t
Q
j
S
SM
rr
= 25˚C unless otherwise specified
SD
rr
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
transistor
CONDITIONS
I
I
I
V
F
F
F
GS
= 25 A; V
= 75 A; V
= 20 A; -dI
= 0 V; V
GS
GS
R
F
/dt = 100 A/ s;
= 30 V
= 0 V
= 0 V
3
MIN.
-
-
-
-
-
-
PSMN009-100W
TYP. MAX. UNIT
0.82
0.95
Product specification
100
0.5
-
-
100
300
1.2
-
-
-
Rev 1.100
ns
A
A
V
V
C