PSMN004-55W,127 NXP Semiconductors, PSMN004-55W,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN004-55W,127
• Description: MOSFET N-CH 55V 100A SOT429
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-55W,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 226nC @ 5V
• Input Capacitance (ciss) @ Vds: 13000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055815127; PSMN004-55W; PSMN004-55W

Philips Semiconductors
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
October 1999
N-channel logic level TrenchMOS
SYMBOL PARAMETER
I
I
V
t
Q
j
S
SM
rr
= 25˚C unless otherwise specified
SD
rr
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
I
I
I
V
F
F
F
GS
= 25 A; V
= 75 A; V
= 20 A; -dI
= -10 V; V
transistor
GS
GS
F
/dt = 100 A/ s;
= 0 V
= 0 V
R
3
= 20 V
MIN.
-
-
-
-
-
-
PSMN004-55W
TYP. MAX. UNIT
0.78
0.92
Product specification
150
0.7
-
-
100
300
1.2
-
-
-
Rev 1.100
ns
A
A
V
C