PHU78NQ03LT,127 NXP Semiconductors, PHU78NQ03LT,127 Datasheet

MOSFET N-CH 25V 75A SOT533

PHU78NQ03LT,127

Manufacturer Part Number
PHU78NQ03LT,127
Description
MOSFET N-CH 25V 75A SOT533
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PHU78NQ03LT,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
970pF @ 12V
Power - Max
107W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934058326127
PHU78NQ03LT
PHU78NQ03LT
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
GD
DSon
Suitable for high frequency
applications due to fast switching
characteristics
Computer motherboards
PHU78NQ03LT
N-channel TrenchMOS logic level FET
Rev. 06 — 15 June 2009
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
see
T
V
V
see
V
T
see
j
mb
mb
j
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
Figure
Figure
Figure 8
= 25 °C; V
= 25 °C; see
= 12 V; T
= 4.5 V; I
= 10 V; I
1; see
9; see
j
D
≤ 175 °C
D
j
= 25 °C;
GS
= 25 A;
= 25 A;
Figure
Figure 2
= 10 V;
Figure 3
Figure 10
7;
Suitable for logic level gate drive
sources
DC-to-DC convertors
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
4
7.65
Max
25
75
107
-
9
Unit
V
A
W
nC
mΩ

Related parts for PHU78NQ03LT,127

PHU78NQ03LT,127 Summary of contents

Page 1

PHU78NQ03LT N-channel TrenchMOS logic level FET Rev. 06 — 15 June 2009 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...

Page 2

... NXP Semiconductors 2. Ordering information Table 2. Ordering information Type number Package Name Description PHU78NQ03LT IPAK plastic single-ended package (IPAK); 3 leads (in-line) 3. Pinning information Table 3. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain PHU78NQ03LT_6 Product data sheet ...

Page 3

... NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage DGR V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot T storage temperature stg ...

Page 4

... NXP Semiconductors Limit (A) DSon Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-mb) junction to mounting base R thermal resistance from th(j-a) junction to ambient 10 Z th(j-mb) (K/W) 1 δ = 0.5 ...

Page 5

... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance R internal gate resistance G (AC) Dynamic characteristics Q total gate charge G(tot) Q gate-source charge ...

Page 6

... NXP Semiconductors Table 6. Characteristics …continued Symbol Parameter t turn-on delay time d(on) t rise time r t turn-off delay time d(off) t fall time f Source-drain diode V source-drain voltage SD t reverse recovery time rr Q recovered charge r 2.5 V GS(th) (V) 2 max 1.5 typ min 1 0 Fig 5. Gate-source threshold voltage as a function of ...

Page 7

... NXP Semiconductors 3.6 R DSon (m Ω Fig 7. Drain-source on-state resistance as a function of drain current; typical values ° Fig 9. Gate-source voltage as a function of gate charge; typical values PHU78NQ03LT_6 Product data sheet 003aaa761 2 a 1 (A) D Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature ...

Page 8

... NXP Semiconductors (pF Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PHU78NQ03LT_6 Product data sheet 003aaa765 ( iss 20 C oss C rss (V) DS Fig 12. Source current as a function of source-drain voltage; typical values Rev. 06 — 15 June 2009 PHU78NQ03LT N-channel TrenchMOS logic level FET 003aaa764 = 25 ° ...

Page 9

... NXP Semiconductors 7. Package outline Plastic single-ended package (IPAK); 3 leads (in-line DIMENSIONS (mm are the original dimensions) UNIT 2.38 0.93 0.89 0.56 1.10 mm 2.22 0.46 0.71 0.46 0.96 Notes 1. Basic spacing between centers. 2. Terminal dimensions are uncontrolled within zone L OUTLINE VERSION IEC SOT533 Fig 13 ...

Page 10

... PHU78NQ03LT_6 20090615 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHU78NQ03LT separated from data sheet PHU_PHD78NQ03LT_5. ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...

Related keywords