BUK9528-100A,127 NXP Semiconductors, BUK9528-100A,127 Datasheet - Page 5

• Manufacturer Part Number: BUK9528-100A,127
• Description: MOSFET N-CH 100V 49A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9528-100A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 4293pF @ 25V
• Power - Max: 166W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934055883127; BUK9528-100A; BUK9528-100A

Philips Semiconductors
March 2000
TrenchMOS
Logic level FET
1E-01
1E-02
1E-03
1E-04
1E-05
1E-05
2.5
1.5
0.5
V
Fig.13. Typical capacitances, C
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
2
1
0
-100
I
C = f(V
GS(TO)
D
0
0.01
VGS(TO) / V
= f(V
Fig.12. Sub-threshold drain current.
max.
min.
typ.
Fig.11. Gate threshold voltage.
= f(T
GS)
DS
-50
0.5
); conditions: V
; conditions: T
j
); conditions: I
0.1
2%
0
transistor
1
VDS/V
Tj / C
1
typ
50
1.5
j
GS
D
= 25 ˚C; V
= 1 mA; V
Sub-Threshold Conduction
= 0 V; f = 1 MHz
98%
100
10
2
iss
, C
150
DS
DS
oss
= V
2.5
100
, C
= V
Ciss
Coss
Crss
GS
rss
200
GS
.
3
5
Fig.14. Typical turn-on gate-charge characteristics.
IF/A
VGS / V
V
I
Fig.16. Normalised avalanche energy rating.
100
F
GS
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
= f(V
0
5
4
3
2
1
0
0
= f(Q
0.0
Fig.15. Typical reverse diode current.
0
20
W
WDSS%
SDS
DSS
G
); conditions: I
0.2
40
); conditions: V
% = f(T
10
60
0.4
VDS = 14V
mb
20
Tj/C= 175
80
); conditions: I
QG / nC
0.6
Tmb / C
VSDS/V
D
100
o
30
GS
= 25 A; parameter V
C
= 0 V; parameter T
0.8
120
BUK9528-100A
BUK9628-100A
Product specification
40
140
D
1.0
VDS = 44V
= 75 A
25
o
C
160
50
1.2
Rev 1.000
180
DS
1.4
60
j