BUK7614-55,118 NXP Semiconductors, BUK7614-55,118 Datasheet

MOSFET N-CH 55V 68A SOT404

BUK7614-55,118

Manufacturer Part Number
BUK7614-55,118
Description
MOSFET N-CH 55V 68A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7614-55118.pdf (8 pages)

Specifications of BUK7614-55,118

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
68A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
2900pF @ 25V
Power - Max
142W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
68 A
Power Dissipation
142 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
 Details
Other names
934045240118
BUK7614-55 /T3
BUK7614-55 /T3
Philips Semiconductors
GENERAL DESCRIPTION
N-channel
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
’trench’
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general
applications.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
ESD LIMITING VALUE
THERMAL RESISTANCES
April 1998
TrenchMOS
Standard level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
V
SYMBOL
R
R
D
D
DM
PIN
V
stg
DS
DGR
tot
C
mb
th j-mb
th j-a
1
2
3
GS
, T
j
gate
drain
source
drain
technology
purpose
enhancement
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
transistor
the
switching
device
mode
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
1
2
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
Human body model
(100 pF, 1.5 k )
CONDITIONS
-
Minimum footprint, FR4
board
mb
mb
mb
mb
GS
3
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1
mb
V
GS
= 10 V
SYMBOL
TYP.
MIN.
MIN.
- 55
50
-
-
-
-
-
-
-
-
-
g
MAX.
Product specification
142
175
55
68
14
MAX.
MAX.
MAX.
1.05
240
142
175
55
55
16
68
48
2
BUK7614-55
-
d
s
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
UNIT
kV
W
˚C
m
V
V
V
A
A
A
W
˚C
V
A

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BUK7614-55,118 Summary of contents

Page 1

... DS(ON) resistance V GS PIN CONFIGURATION CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS Human body model (100 pF, 1 CONDITIONS - Minimum footprint, FR4 board 1 Product specification BUK7614-55 MAX. UNIT 55 68 142 175 SYMBOL MIN. MAX. UNIT - 240 - 142 175 ˚C MIN. MAX. UNIT ...

Page 2

... 175˚C j CONDITIONS MHz Resistive load Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad CONDITIONS -dI /dt = 100 - Product specification BUK7614-55 MIN. TYP. MAX. UNIT 3 500 MIN. TYP. MAX. UNIT ...

Page 3

... RDS(ON) = VDS/ID 120 140 160 180 = f & 1E+01 1E+00 1E-01 1E-02 1E-03 120 140 160 180 Product specification BUK7614-55 MIN. TYP. MAX ˚C mb 1000 100 100 VDS / V Fig.3. Safe operating area ˚ f single pulse; parameter Zth / (K/W) 0.5 0.2 0.1 0.05 ...

Page 4

... Fig.8. Typical transconductance 2 1 ˚C . Fig.9. Normalised drain-source on-state resistance -100 Product specification BUK7614- ID f(I ); conditions BUK959-60 Rds(on) normlised to 25degC -100 - 100 Tmb / degC / DS(ON) DS(ON)25 ˚ VGS(TO max. typ. min. - 100 Fig.10. Gate threshold voltage. = f(T ) ...

Page 5

... 120 110 100 Ciss Coss Crss 10 100 , Fig.15. Normalised avalanche energy rating. iss oss rss VDS = 44V VGS Product specification BUK7614-55 Tj/C = 175 0.2 0.4 0.6 0.8 1 VSDS/V Fig.14. Typical reverse diode current. = f(V ); conditions parameter T SDS GS WDSS 100 120 140 ...

Page 6

... Philips Semiconductors TrenchMOS transistor Standard level FET RD VGS RG 0 Fig.17. Switching test circuit. April 1998 VDD + VDS - T.U.T. 6 Product specification BUK7614-55 Rev 1.000 ...

Page 7

... Epoxy meets UL94 V0 at 1/8". April 1998 10.3 max 11 max 15.4 0.85 max (x2) Fig.18. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.19. SOT404 : soldering pattern for surface mounting . 7 Product specification BUK7614-55 4.5 max 1.4 max 2.5 0.5 17.5 Rev 1.000 ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1998 8 Product specification BUK7614-55 Rev 1.000 ...

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