BUK7575-55,127 NXP Semiconductors, BUK7575-55,127 Datasheet - Page 5

• Manufacturer Part Number: BUK7575-55,127
• Description: MOSFET N-CH 55V 19.7A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7575-55,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 19.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 61W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934050390127; BUK7575-55; BUK7575-55

Philips Semiconductors
April 1998
TrenchMOS
Standard level FET
Fig.13. Typical turn-on gate-charge characteristics.
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
VGS/V
V
.9
.8
.7
.6
.5
.4
.3
.2
.1
GS
Fig.12. Typical capacitances, C
1
0
0.01
12
10
I
C = f(V
8
6
4
2
0
D
0
0
= f(Q
= f(V
Fig.11. Sub-threshold drain current.
G
GS)
DS
); conditions: I
); conditions: V
; conditions: T
1
0.1
transistor
5
2%
2
VDS = 14V
QG/nC
1
D
= 20 A; parameter V
j
GS
= 25 ˚C; V
typ
VDS/V
= 0 V; f = 1 MHz
Sub-Threshold Conduction
3
10
iss
10
, C
VDS = 44V
98%
DS
oss
4
= V
, C
GS
rss
100
.
Coss
DS
Crss
Ciss
15
5
5
VGS
0
IF/A
I
Fig.15. Normalised avalanche energy rating.
100
F
80
60
40
20
120
110
100
0
= f(V
90
80
70
60
50
40
30
20
10
0
0
Fig.14. Typical reverse diode current.
Fig.16. Avalanche energy test circuit.
20
W
WDSS%
W
SDS
DSS
DSS
40
); conditions: V
% = f(T
RGS
0.5 LI
60
0.5
mb
Tj/C =
80
); conditions: I
D
2
BV
VSDS/V
Tmb / C
100
175
GS
DSS
L
= 0 V; parameter T
VDS
120
BV
T.U.T.
Product specification
DSS
1
BUK7575-55
140
D
shunt
= 17 A
R 01
V
DD
25
160
-
+
Rev 1.100
-ID/100
180
VDD
1.5
j