BSP304A,126 NXP Semiconductors, BSP304A,126 Datasheet - Page 2

• Manufacturer Part Number: BSP304A,126
• Description: MOSFET P-CH 300V 170MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSP304A,126

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2.55V @ 1mA
• Input Capacitance (ciss) @ Vds: 90pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934030880126; BSP304A AMO; BSP304A AMO

Philips Semiconductors
FEATURES
APPLICATIONS
PINNING - TO-92 variant
QUICK REFERENCE DATA
1995 Apr 07
BSP304
BSP304A
V
V
V
I
R
P
D
SYMBOL
Direct interface to C-MOS, TTL etc.
High speed switching
No secondary breakdown.
Intended for use as a Line current interruptor in
telephone sets and for applications in relay, high speed
and line transformer drivers.
DS
GSO
GSth
tot
P-channel enhancement mode
vertical D-MOS transistors
DSon
PIN
1
2
3
1
2
3
drain-source voltage (DC)
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
SYMBOL
g
d
g
d
s
s
PARAMETER
gate
drain
source
source
gate
drain
DESCRIPTION
open drain
I
I
V
up to T
2
D
D
GS
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a TO-92 variant package.
= 1 mA; V
= 170 mA;
handbook, halfpage
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
= 10 V
CONDITIONS
amb
= 25 C
1
2
Fig.1 Simplified outline and symbol.
3
DS
= V
GS
CAUTION
BSP304; BSP304A
1.7
MIN.
MAM144
Product specification
17
1
300
20
2.55
170
g
MAX.
V
V
V
mA
W
d
s
UNIT