BSN304,126 NXP Semiconductors, BSN304,126 Datasheet - Page 5

• Manufacturer Part Number: BSN304,126
• Description: MOSFET N-CH 300V 300MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSN304,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 120pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934023530126; BSN304 AMO; BSN304 AMO

Philips Semiconductors
2001 Dec 11
handbook, halfpage
handbook, halfpage
N-channel enhancement mode
vertical D-MOS transistor
R DSon
Fig.8
T
T
( )
j
j
= 25 C.
= 25 C.
(A)
1.2
I D
0.8
0.4
30
20
10
0
0
10
0
Fig.6 Typical output characteristics.
1
Drain-source on-state resistance as a
function of drain current; typical values.
V GS = 10 V
V GS = 2 V
4
2.5 V
1
5 V
4 V
3.5 V
3 V 3.5 V
8
10 V
4 V
5 V
I D (A)
V DS (V)
2.5 V
3 V
2 V
MLD766
MLD768
12
10
5
handbook, halfpage
handbook, halfpage
Fig.9
V
R DSon
DS
V
( )
DS
(A)
= 10 V; T
1.2
I D
0.8
0.4
20
15
10
= 100 mV; T
0
5
0
0
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
0
Fig.7 Typical transfer characteristics.
j
= 25 C.
j
2
2
= 25 C.
4
4
6
6
Product specification
8
8
V GS (V)
V GS (V)
BSN304
MLD767
MLD769
10
10