IRF530N,127 NXP Semiconductors, IRF530N,127 Datasheet - Page 4

• Manufacturer Part Number: IRF530N,127
• Description: MOSFET N-CH 100V 17A TO-220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRF530N,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 25V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1159-5; 934055534127

Philips Semiconductors
August 1999
N-channel TrenchMOS
Fig.9. Normalised drain-source on-state resistance.
20
18
16
14
12
10
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
15
14
13
12
11
10
8
6
4
2
0
9
8
7
6
5
4
3
2
1
0
-60
Fig.8. Typical transconductance, T
0
0
Drain current, ID (A)
Transconductance, gfs (S)
Normalised On-state Resistance
VDS > ID X RDS(ON)
VDS > ID X RDS(ON)
Fig.7. Typical transfer characteristics.
-40
1
2
-20
2
4
R
Junction temperature, Tj (C)
0
DS(ON)
Gate-source voltage, VGS (V)
3
6
20
175 C
Drain current, ID (A)
/R
I
D
g
4
8
40
fs
= f(V
DS(ON)25 ˚C
= f(I
Tj = 25 C
60
10
5
Tj = 25 C
GS
D
)
80
)
12
6
= f(T
100 120 140 160 180
transistor
14
7
j
)
175 C
j
16
8
= 25 ˚C .
18
9
10
20
4
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
10000
4.5
3.5
2.5
1.5
0.5
1000
4
3
2
1
0
100
V
-60 -40 -20
Fig.12. Typical capacitances, C
10
I
C = f(V
GS(TO)
Threshold Voltage, VGS(TO) (V)
D
0.1
= f(V
Capacitances, Ciss, Coss, Crss (pF)
0
Fig.11. Sub-threshold drain current.
Drain current, ID (A)
Fig.10. Gate threshold voltage.
= f(T
0.5
GS)
DS
); conditions: V
; conditions: T
j
); conditions: I
0
1
Gate-source voltage, VGS (V)
minimum
Junction Temperature, Tj (C)
Drain-Source Voltage, VDS (V)
20
1.5
1
40
2
typical
60
minimum
2.5
j
typical
GS
D
= 25 ˚C; V
80
maximum
= 1 mA; V
= 0 V; f = 1 MHz
3
Product specification
100 120 140 160 180
10
3.5
iss
, C
maximum
DS
IRF530N
DS
4
oss
= V
, C
= V
Rev 1.100
Crss
4.5
Coss
Ciss
GS
rss
GS
.
100
5