SIB411DK-T1-E3 Vishay, SIB411DK-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SIB411DK-T1-E3
• Description: MOSFET P-CH 20V 9A SC75-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIB411DK-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 66 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 8V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 13W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.066 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIB411DK-T1-E3TR

RECOMMENDED PAD LAYOUT FOR PowerPAK
Document Number: 70488
Revision: 21-Jan-08
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1.700 (0.067)
1.100
0.300 (0.012)
0.300 (0.012)
0.250 (0.01)
(0.043)
1
0.670 (0.026)
0.545 (0.021)
Dimensions in mm/(Inches)
®
1.250 (0.049)
2.000 (0.079)
0.400 (0.016)
SC75-6L Single
0.250 (0.01)
0.370 (0.015)
0.200 (0.008)
0.250 (0.01)
0.500 (0.02)
0.620 (0.024)
Application Note 826
0.300 (0.012)
0.180 (0.007)
2.000 (0.079)
Vishay Siliconix
www.vishay.com
13