SSM1N45BTF Fairchild Semiconductor, SSM1N45BTF Datasheet - Page 3

• Manufacturer Part Number: SSM1N45BTF
• Description: MOSFET N-CH 450V 500MA SOT-223
• Manufacturer: Fairchild Semiconductor

Specifications of SSM1N45BTF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.25 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
400
300
200
100
-1
12
10
0
10
0
8
6
4
2
0
10
-1
0
Top :
Bottom : 4.5 V
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
-1
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
6.0 V
5.5 V
5.0 V
V
GS
1
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
10
D
0
, Drain Current [A]
0
V
2
GS
C
C
C
= 20V
oss
iss
rss
V
GS
= 10V
3
C
C
C
※ Notes :
iss
oss
rss
1. 250μ s Pulse Test
2. T
10
10
= C
= C
= C
1
※ Note : T
C
1
gs
gd
= 25℃
ds
+ C
+ C
4
※ Note ;
gd
gd
1. V
2. f = 1 MHz
(C
J
ds
= 25℃
GS
= shorted)
= 0 V
5
10
10
10
10
12
10
8
6
4
2
0
-1
-1
0
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation with Source Current
1
0.4
25℃
150℃
150℃
4
2
V
V
and Temperature
Q
GS
SD
0.6
G
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
3
25℃
V
V
V
DS
DS
DS
-55℃
= 360V
0.8
= 90V
= 225V
6
4
1.0
※ Notes :
※ Notes :
5
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 50V
= 0V
1.2
D
6
= 0.5 A
Rev. A, November 2002
1.4
10
7