IRFP264NPBF Vishay, IRFP264NPBF Datasheet
IRFP264NPBF
Specifications of IRFP264NPBF
Available stocks
Related parts for IRFP264NPBF
IRFP264NPBF Summary of contents
Page 1
... The TO-247 package is preferred for commercial-industrial N-Channel MOSFET applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247 IRFP264NPbF SiHFP264N-E3 IRFP264N SiHFP264N = 25 °C, unless otherwise noted ° ...
Page 2
... IRFP264N, SiHFP264N Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
Page 3
... PULSE WIDTH T = 175 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics Document Number: 91216 S-81274-Rev. A, 16-Jun-08 1000 100 10 ° 10 100 ° 100 IRFP264N, SiHFP264N Vishay Siliconix ° 175 C ° 50V DS 20μs PULSE WIDTH 1 4.0 5.0 6.0 7.0 8.0 9 Gate-to-Source Voltage (V) GS Fig ...
Page 4
... IRFP264N, SiHFP264N Vishay Siliconix 8000 0V MHZ C iss = rss = oss = 6000 Ciss 4000 Coss 2000 Crss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 25A 200V 125V 50V FOR TEST CIRCUIT SEE FIGURE 120 Q , Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...
Page 5
... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91216 S-81274-Rev. A, 16-Jun-08 125 150 175 ° SINGLE PULSE 0.0001 0.001 t , Rectangular Pulse Duration (sec Driver + - IRFP264N, SiHFP264N Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit V DS ...
Page 6
... IRFP264N, SiHFP264N Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 1000 TOP 800 BOTTOM 600 400 200 100 125 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D 10A 18A 25A 150 175 ° Current regulator Same type as D.U.T. 50 kΩ ...
Page 7
... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91216. ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...