IRFP264NPBF Vishay, IRFP264NPBF Datasheet - Page 5

• Manufacturer Part Number: IRFP264NPBF
• Description: MOSFET N-CH 250V 44A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP264NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 3860pF @ 25V
• Power - Max: 380W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFP264NPBF

Document Number: 91216
S-81274-Rev. A, 16-Jun-08
Fig. 9 - Maximum Drain Current vs. Case Temperature
50
40
30
20
10
Fig. 12a - Unclamped Inductive Test Circuit
0
25
0.001
R
0.01
20 V
0.1
G
0.00001
V
1
DS
D = 0.50
50
t
p
T , Case Temperature ( C)
0.20
0.10
0.05
0.02
0.01
C
I
AS
D.U.T
75
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
(THERMAL RESPONSE)
15 V
125
0.0001
SINGLE PULSE
Driver
°
150
+
- V
DD
A
t , Rectangular Pulse Duration (sec)
1
175
0.001
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
1. Duty factor D = t / t
2. Peak T = P
GS
Notes:
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
IRFP264N, SiHFP264N
10 V
V
GS
t
d(on)
J
V
0.01
DS
DM
t
r
x Z
t
1
p
thJC
P
2
D.U.T.
DM
+ T
Vishay Siliconix
R
C
t
D
1
t
d(off)
V
DS
t
2
t
f
+
-
www.vishay.com
V
DD
0.1
5