IRF634NPBF Vishay, IRF634NPBF Datasheet - Page 5

• Manufacturer Part Number: IRF634NPBF
• Description: MOSFET N-CH 250V 8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF634NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 435 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF634NPBF

Document Number: 91033
S-82999-Rev. A, 12-Jan-09
91033_07
91033_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
0.1
0.1
Fig. 8 - Maximum Safe Operating Area
10
10
1
2
1
2
0.2
1
V
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
V
T
SD
DS
0.4
J
= 175
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
10
°
C
T
T
Single Pulse
0.6
C
J
by R
= 175 °C
= 25 °C
DS(on)
T
0.8
J
= 25
10
2
°
C
1.0
V
100
10
GS
1
ms
= 0 V
ms
µs
1.2
10
3
91033_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
10.0
8.0
6.0
4.0
2.0
0.0
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
25
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
50
GS
t
d(on)
T
C
V
, Case Temperature (°C)
DS
t
75
r
100
D.U.T.
Vishay Siliconix
R
D
t
125
d(off)
t
f
150
+
-
www.vishay.com
V
DD
175
5