IRF634NPBF Vishay, IRF634NPBF Datasheet - Page 2

• Manufacturer Part Number: IRF634NPBF
• Description: MOSFET N-CH 250V 8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF634NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 435 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF634NPBF

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting T
c. 1.6 mm from case.
d. This is only applied to TO-220 package.
e. This is applied to D
Notes
a. This is only applied to TO-220 package.
b. This is applied to D
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
Case-to-Sink, Flat, Greased Surface
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
DS
Temperature Coefficient
J
= 25 °C, L = 9.5 mH, R
b
d
a
2
2
a
PAK, when mounted 1" square PCB (FR-4 or G-10 material).
PAK, when mounted 1" square PCB (FR-4 or G-10 material).
J
a
a
= 25 °C, unless otherwise noted
b
G
a
= 25 Ω, I
e
AS
SYMBOL
SYMBOL
ΔV
R
V
I
I
= 4.8 A, V
R
R
V
R
R
GS(th)
DS(on)
GSS
DSS
g
DS
thCS
DS
thJA
thJA
thJC
fs
C
/T
V
= 25 °C, unless otherwise noted
J
GS
6-32 or M3 screw
at 10 V
GS
= 10 V.
V
T
T
V
for 10 s
GS
C
A
DS
= 25 °C
= 25 °C
Reference to 25 °C, I
= 10 V
= 200 V, V
T
T
V
V
V
V
C
C
TYP.
TEST CONDITIONS
0.50
DS
DS
DS
GS
= 100 °C
= 25 °C
-
-
-
= 250 V, V
= V
= 50 V, I
= 0 V, I
V
GS
GS
GS
= ± 20 V
, I
= 0 V, T
D
D
D
= 250 µA
= 250 µA
I
GS
= 4.8 A
D
SYMBOL
T
= 4.8 A
dV/dt
D
J
= 0 V
V
V
E
E
I
I
P
, T
DM
I
AR
= 1 mA
J
GS
DS
AS
AR
D
D
= 150 °C
stg
b
b
MAX.
1.7
62
40
-
- 55 to + 175
MIN.
250
2.0
5.4
-
-
-
-
-
LIMIT
300
± 20
0.59
250
110
8.0
5.6
4.8
8.8
3.8
7.3
1.1
32
88
10
c
S-82999-Rev. A, 12-Jan-09
Document Number: 91033
TYP.
0.33
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.435
250
4.0
25
-
-
-
lbf · in
UNIT
W/°C
N · m
V/ns
mJ
mJ
°C
W
V
A
A
UNIT
V/°C
nA
µA
V
V
Ω
S