IRF734STRL Vishay, IRF734STRL Datasheet - Page 5

• Manufacturer Part Number: IRF734STRL
• Description: MOSFET N-CH 450V 4.9A D2PAK
• Manufacturer: Vishay

Specifications of IRF734STRL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 25V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 91049
S-82998-Rev. A, 12-Jan-08
91049_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Vary t
required I
5.0
4.0
3.0
2.0
1.0
0.0
91049_11
Fig. 12a - Unclamped Inductive Test Circuit
25
p
to obtain
10
AS
0.1
10
-2
1
R
10
10 V
50
G
T
-5
0 − 0.5
0.2
0.1
0.05
0.02
0.01
C
V
, Case Temperature (°C)
DS
t
p
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
10
D.U.T.
100
-4
0.01 Ω
L
Single Pulse
(Thermal Response)
125
10
t
150
-3
1
, Rectangular Pulse Duration (s)
+
-
V
DD
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
0.1
AS
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
t
Notes:
1. Duty Factor, D = t
2. Peak T
d(on)
GS
V
DS
t
r
1
j
t
p
= P
IRF734, SiHF734
P
DM
DM
D.U.T.
x Z
t
Vishay Siliconix
1
1
thJC
/t
R
2
V
t
D
d(off)
t
DS
2
+ T
C
10
t
f
V
DD
www.vishay.com
+
-
V
DD
5