IRF734STRL Vishay, IRF734STRL Datasheet
IRF734STRL
Specifications of IRF734STRL
Related parts for IRF734STRL
IRF734STRL Summary of contents
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... Simple Drive Requirements 24 • Lead (Pb)-free Single DESCRIPTION D Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance ...
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... IRF734, SiHF734 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... V Drain-to-Source Voltage ( 91049_02 Fig Typical Output Characteristics, T Document Number: 91049 S-82998-Rev. A, 12-Jan-08 4 ° 91049_03 = 25 ° 150 ° 91049_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRF734, SiHF734 Vishay Siliconix 1 10 ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF734, SiHF734 Vishay Siliconix 1400 MHz iss gs 1200 rss oss ds 1000 C iss 800 600 C oss 400 C rss 200 Drain-to-Source Voltage ( 91049_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 4 360 225 Total Gate Charge (nC) 91049_06 G Fig Typical Gate Charge vs. Drain-to-Source Voltage www.vishay.com Shorted gd ds ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91049 S-82998-Rev. A, 12-Jan-08 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( Fig. 12b - Unclamped Inductive Waveforms IRF734, SiHF734 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF734, SiHF734 Vishay Siliconix 91049_12c Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 800 Top Bottom 600 400 200 100 Starting T , Junction Temperature (°C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D 2.2 A 3.1 A 4.9 A 125 150 Current regulator Same type as D.U.T. ...
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... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91049. Document Number: 91049 S-82998-Rev ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...