IRFU220 Vishay, IRFU220 Datasheet - Page 3
IRFU220
Manufacturer Part Number
IRFU220
Description
MOSFET N-CH 200V 4.8A I-PAK
Manufacturer
Vishay
Datasheet
1.IRFU220.pdf
(8 pages)
Specifications of IRFU220
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.8 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.8 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IRFU220IR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFU220N
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFU220NPBF
Manufacturer:
IR
Quantity:
20 000
IRFR220, IRFU220, SiHFR220, SiHFU220
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
= 25 °C
Fig. 3 - Typical Transfer Characteristics
C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
C
Document Number: 91270
www.vishay.com
S-82991-Rev. B, 12-Jan-09
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