IRFU220 Vishay, IRFU220 Datasheet - Page 2

• Manufacturer Part Number: IRFU220
• Description: MOSFET N-CH 200V 4.8A I-PAK
• Manufacturer: Vishay

Specifications of IRFU220

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 260pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRFU220IR

IRFR220, IRFU220, SiHFR220, SiHFU220
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
GS
GS
R
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
J
Reference to 25 °C, I
= 10 V
= 10 V
= 25 °C, I
MIN.
= 160 V, V
= 18 Ω, R
V
-
-
-
V
V
V
V
f = 1.0 MHz, see fig. 5
DD
TEST CONDITIONS
DS
DS
DS
GS
= 200 V, V
= 100 V, I
F
= V
= 50 V, I
= 0 V, I
V
V
= 4.8 A, dI/dt = 100 A/µs
V
GS
DS
S
D
GS
I
GS
GS
D
= 4.8 A, V
= 20 Ω, see fig. 10
= ± 20 V
, I
= 25 V,
= 4.8 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 µA
D
= 250 µA
I
GS
= 2.9 A
D
= 4.8 A,
= 2.9 A
D
TYP.
= 0 V
GS
= 1 mA
J
-
-
-
DS
G
= 125 °C
G
= 0 V
b
= 160 V,
b
D
S
b
b
b
D
S
b
MIN.
200
2.0
1.7
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
3.0
50
S-82991-Rev. B, 12-Jan-09
Document Number: 91270
TYP.
0.29
0.91
260
100
150
7.2
4.5
7.5
30
22
19
13
-
-
-
-
-
-
-
-
-
-
-
-
-
± 100
MAX.
0.80
S
250
300
4.0
3.0
7.9
4.8
1.8
1.8
25
14
19
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V