IRF9640S Vishay, IRF9640S Datasheet - Page 5

• Manufacturer Part Number: IRF9640S
• Description: MOSFET P-CH 200V 11A D2PAK
• Manufacturer: Vishay

Specifications of IRF9640S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9640S

Document Number: 91087
S09-0046-Rev. A, 19-Jan-09
Vary t
required I
91087_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
12
10
AS
91087_11
8
6
4
2
0
25
R
- 10 V
G
10
0.1
10
-2
1
V
10
DS
50
0.05
0.02
0.01
-5
D = 0.50
0.20
0.10
T
t
C
p
, Case Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
I
AS
D.U.T
0.01 Ω
L
10
100
-4
Single Pulse
(Thermal Response)
125
+
-
10
t
V
150
-3
1
, Rectangular Pulse Duration (s)
DD
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
10 %
90 %
DS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
IRF9640S, SiHF9640S
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
t
p
1
j
= P
D.U.T.
P
DM
DM
R
Vishay Siliconix
D
x Z
t
d(off)
t
V
1
1
thJC
/t
DS
2
t
+ T
2
t
f
+
-
C
10
www.vishay.com
V
V
DD
DD
5