IRF9640S Vishay, IRF9640S Datasheet - Page 4

• Manufacturer Part Number: IRF9640S
• Description: MOSFET P-CH 200V 11A D2PAK
• Manufacturer: Vishay

Specifications of IRF9640S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9640S

IRF9640S, SiHF9640S
Vishay Siliconix
www.vishay.com
4
91087_05
91087_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
2400
2000
1600
1200
800
400
20
16
12
8
4
0
0
10
0
I
0
D
= - 11 A
- V
10
DS ,
Q
V
G
DS
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
= - 40 V
20
V
DS
V
C
C
C
= - 100 V
GS
iss
rss
oss
30
= 0 V, f = 1 MHz
= C
= C
= C
V
DS
10
gs
gd
ds
= - 160 V
1
+ C
+ C
40
gd
gd
C
C
C
For test circuit
see figure 13
, C
iss
oss
rss
ds
50
Shorted
60
91087_07
91087_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
-1
1
2
0
5
2
5
2
1
Fig. 8 - Maximum Safe Operating Area
0.0
1
2
- V
- V
1.0
SD
DS
150
Operation in this area limited
5
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
°
C
10
T
T
Single Pulse
2.0
C
J
by R
= 150 °C
= 25 °C
2
DS(on)
S09-0046-Rev. A, 19-Jan-09
5
3.0
25
Document Number: 91087
10
°
C
2
2
4.0
10
10
100
1
V
ms
GS
ms
µs
µs
= 0 V
5
5.0
10
3