IRF9620S Vishay, IRF9620S Datasheet - Page 3

MOSFET P-CH 200V 3.5A D2PAK

IRF9620S

Manufacturer Part Number
IRF9620S
Description
MOSFET P-CH 200V 3.5A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF9620S

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9620S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9620S
Manufacturer:
IR
Quantity:
305
Company:
Part Number:
IRF9620STRLPBF
Quantity:
70 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91083
S09-0015-Rev. A, 19-Jan-09
91083_02
91083_01
- 5
- 4
- 3
- 2
- 1
- 5
- 4
- 3
- 2
- 1
0
0
91083_05
0
0
Fig. 2 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics
0.05
0.02
0.01
2.0
1.0
0.5
0.2
0.1
V
V
- 4 V
- 10
DS
GS
- 5 V
- 6 V
- 2
10
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
V
-5
0.05
0.02
0.01
D = 0.5
0.2
0.1
T
GS
T
J
T
J
= - 55
= - 10, - 9, - 8, - 7 V
J
= 125
2
= 25
- 20
- 4
°
°
°
C
C
5
C
80 µs Pulse Test
V
DS
- 30
- 6
10
> I
-4
D(on)
80 µs Pulse Test
Single Pulse (Transient
Thermal Impedence)
2
x R
- 40
- 8
DS(on) max.
5
10
- 50
- 10
t
-3
1
, Square Wave Pulse Duration (s)
2
5
10
-2
91083_03
91083_04
2
10
0.1
5
- 5
- 4
- 3
- 2
- 1
10
0
1
2
5
2
5
2
5
2
0
1
Fig. 3 - Typical Saturation Characteristics
0.1
80 µs Pulse Test
Negative V
Fig. 4 - Maximum Safe Operating Area
Notes:
1. Duty Factor, D = t
2. Per Unit Base = R
3. T
2
V
IRF9620S, SiHF9620S
JM
2
DS
- 1
- T
Operation in this area limited
, Drain-to-Source Voltage (V)
5
C
DS
= P
5
10
, Drain-to-Source Voltage (V)
DM
T
T
Single Pulse
- 2
1.0
C
J
by R
Z
= 150 °C
= 25 °C
2
thJC
P
V
1
thJC
DM
/t
GS
DS(on)
2
(t)
2
= 3.12 °C/W
= - 10, - 9, - 8, - 7 V
Vishay Siliconix
5
- 3
t
1
10
5
2
t
2
- 4
2
10
100
1
10
www.vishay.com
ms
ms
µs
- 5 V
- 4 V
- 6 V
5
10
- 5
3
3

Related parts for IRF9620S