IRF840AS Vishay, IRF840AS Datasheet - Page 5

• Manufacturer Part Number: IRF840AS
• Description: MOSFET N-CH 500V 8A D2PAK
• Manufacturer: Vishay

Specifications of IRF840AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840AS

Document Number: 91066
S-81412-Rev. A, 07-Jul-08
Fig. 9 - Maximum Drain Current vs. Case Temperature
8.0
6.0
4.0
2.0
0.0
25
0.01
0.1
10
0.00001
1
50
T , Case Temperature ( C)
D = 0.50
C
0.20
0.10
0.05
0.02
0.01
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
IRF840AS, IRF840AL, SiHF840AS, SiHF840AL
125
°
150
t , Rectangular Pulse Duration (sec)
1
0.001
0.01
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
1. Duty factor D = t / t
2. Peak T = P
G
Notes:
10 V
V
GS
t
d(on)
V
J
DS
t
r
DM
x Z
1
0.1
D.U.T.
thJC
P
2
DM
Vishay Siliconix
R
+ T
D
t
d(off)
C
t
1
t
2
t
f
+
-
www.vishay.com
V
DD
1
5