IRF840AS Vishay, IRF840AS Datasheet - Page 2

• Manufacturer Part Number: IRF840AS
• Description: MOSFET N-CH 500V 8A D2PAK
• Manufacturer: Vishay

Specifications of IRF840AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840AS

IRF840AS, IRF840AL, SiHF840AS, SiHF840AL
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
d. Uses IRF840A/SiHF840A data and test conditions
www.vishay.com
2
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
C
R
V
oss
t
t
I
I
C
C
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
t
DS
SM
I
t
t
on
DS
oss
oss
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
R
V
J
GS
GS
GS
G
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
J
= 10 V
= 10 V
= 9.1 Ω, R
= 0 V
= 25 °C, I
MIN.
= 400 V, V
V
-
-
V
V
V
V
f = 1.0 MHz, see fig. 5
DD
TEST CONDITIONS
oss
DS
DS
GS
DS
= 500 V, V
= 250 V, I
F
= V
while V
= 0 V, I
V
= 50 V, I
V
= 8.0 A, dI/dt = 100 A/µs
V
GS
D
DS
S
V
GS
V
I
GS
GS
D
= 31 Ω, see fig. 10
DS
= 8.0 A, V
DS
V
= ± 30 V
see fig. 6 and 13
, I
= 25 V,
= 8.0 A, V
DS
= 0 V,
= 0 V, T
DS
D
= 400 V, f = 1.0 MHz
D
= 1.0 V, f = 1.0 MHz
D
= 250 µA
= 0 V to 480 V
D
= 250 µA
I
is rising from 0 to 80 % V
GS
D
= 4.8 A
= 8.0 A,
= 4.8 A
D
TYP.
= 0 V
= 1 mA
GS
J
-
-
DS
G
= 125 °C
= 0 V
= 400 V,
b
d
b, d
b, d
b
D
S
c, d
b
MIN.
500
2.0
3.7
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0
40
DS
.
Document Number: 91066
S-81412-Rev. A, 07-Jul-08
TYP.
1018
1490
0.58
155
422
8.0
2.0
42
56
11
23
26
19
-
-
-
-
-
-
-
-
-
-
-
-
-
± 100
MAX.
0.85
S
250
633
4.0
9.0
8.0
2.0
3.0
25
38
18
32
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
)
V/°C
nA
µA
nC
µC
pF
ns
ns
V
V
Ω
S
A
V