IRF630S Vishay, IRF630S Datasheet - Page 5

• Manufacturer Part Number: IRF630S
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay

Specifications of IRF630S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 91032
S11-1047-Rev. C, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91032_08
91032_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
10
1
2
0
3
5
2
5
2
5
2
5
2
1
0.5
0.1
Fig. 8 - Maximum Safe Operating Area
150
2
°
V
V
5
C
DS
SD
0.7
1
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
T
T
Single Pulse
2
C
J
25
= 150 °C
= 25 °C
5
°
C
10
0.9
by R
2
DS(on)
5
10
1.1
2
2
1
10
10
100
ms
ms
5
µs
µs
10
1.3
V
This document is subject to change without notice.
3
GS
2
= 0 V
5
10
1.5
4
91032_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
8
6
4
2
0
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
25
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
GS
t
d(on)
50
T
C
V
IRF630S, SiHF630S
, Case Temperature (°C)
DS
t
r
75
D.U.T.
www.vishay.com/doc?91000
Vishay Siliconix
100
R
D
t
d(off)
t
125
f
+
-
www.vishay.com
V
DD
150
5