IRF630S Vishay, IRF630S Datasheet - Page 4

• Manufacturer Part Number: IRF630S
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay

Specifications of IRF630S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF630S, SiHF630S
Vishay Siliconix
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91032_03
91032_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
1
0
- 60 - 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
150
D
GS
= 5.9 A
= 10 V
°
V
C
5
GS ,
T
25
J ,
Junction Temperature (°C)
°
Gate-to-Source Voltage (V)
C
6
20 40 60 80 100 120 140 160
7
20 µs Pulse Width
V
8
DS
=
50 V
This document is subject to change without notice.
9
10
91032_05
91032_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1600
1200
800
400
20
16
12
0
8
4
0
10
0
I
0
D
= 5.9 A
V
DS ,
10
Q
V
G
Drain-to-Source Voltage (V)
DS
, Total Gate Charge (nC)
= 40 V
V
DS
20
= 100 V
V
C
C
C
GS
iss
rss
oss
V
DS
= 0 V, f = 1 MHz
= C
= C
= C
= 160 V
S11-1047-Rev. C, 30-May-11
10
www.vishay.com/doc?91000
gs
gd
ds
30
1
Document Number: 91032
+ C
+ C
C
C
C
rss
gd
oss
iss
gd
For test circuit
see figure 13
, C
40
ds
Shorted
50