IRF510S Vishay, IRF510S Datasheet - Page 4

• Manufacturer Part Number: IRF510S
• Description: MOSFET N-CH 100V 5.6A D2PAK
• Manufacturer: Vishay

Specifications of IRF510S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF510S

IRF510S, SiHF510S
Vishay Siliconix
www.vishay.com
4
91016_05
91016_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
400
320
240
160
80
20
16
12
0
8
4
0
10
0
I
0
D
= 5.6 A
V
DS ,
2
Q
V
G
Drain-to-Source Voltage (V)
DS
, Total Gate Charge (nC)
= 20 V
V
4
DS
V
C
C
C
GS
iss
rss
oss
= 50 V
V
= C
= 0 V, f = 1 MHz
= C
= C
DS
C
C
C
10
gs
gd
iss
oss
rss
= 80 V
ds
6
1
+ C
+ C
gd
gd
For test circuit
see figure 13
, C
ds
8
Shorted
10
91016_07
91016_08
10
10
10
Fig. 7 - Typical Source-Drain Diode Forward Voltage
0.1
10
1
2
0
-1
5
2
5
2
5
2
0.5
1
Fig. 8 - Maximum Safe Operating Area
2
0.6
V
V
DS
SD
175
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
5
0.7
°
25
C
10
°
C
T
T
Single Pulse
C
J
0.8
by R
= 175 °C
= 25 °C
2
DS(on)
0.9
5
S-82996-Rev. A, 19-Jan-09
10
Document Number: 91016
1
100
10
1.0
2
ms
ms
2
µs
V
GS
1.1
= 0 V
5
10
1.2
3