IRF510S Vishay, IRF510S Datasheet
IRF510S
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IRF510S Summary of contents
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... IRF510STRL SiHF510STL = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 5.6 A (see fig. 12 ≤ 175 °C. J IRF510S, SiHF510S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF510STRRPbF a a SiHF510STR- IRF510STRR a a SiHF510STR SYMBOL LIMIT V 100 DS V ± ...
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... IRF510S, SiHF510S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Fig Typical Output Characteristics, T Document Number: 91016 S-82996-Rev. A, 19-Jan- 4 ° 91016_03 = 25 °C C 3.0 2.5 2.0 1.5 4.5 V 1.0 0.5 = 175 °C 0 91016_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C IRF510S, SiHF510S Vishay Siliconix 1 ° ° 175 µs Pulse Width - Gate-to-Source Voltage ( Fig Typical Transfer Characteristics ...
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... IRF510S, SiHF510S Vishay Siliconix 400 MHz iss rss gd 320 oss ds 240 C iss 160 C oss 80 C rss Drain-to-Source Voltage ( 91016_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 5 Total Gate Charge (nC) 91016_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted 91016_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91016 S-82996-Rev. A, 19-Jan-09 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF510S, SiHF510S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF510S, SiHF510S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91016_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 300 Top ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF510S, SiHF510S Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...