ZXM62N03E6TA Diodes Zetex, ZXM62N03E6TA Datasheet - Page 5

• Manufacturer Part Number: ZXM62N03E6TA
• Description: MOSFET N-CH 30V 3.2A SOT-23-6
• Manufacturer: Diodes Zetex

Specifications of ZXM62N03E6TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 9.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: ZXM62N03E6TR

PROVISIONAL ISSUE A - MAY 1999
0.01
100
100
0.1
0.1
0.1
10
10
10
1
1
1
0.1
0.1
2
Typical Transfer Characteristics
On-Resistance v Drain Current
VGS=3V
+25°C
VDS=10V
T=150 C
2.5
T=25 C
VGS - Gate-Source Voltage (V)
V
DS
Output Characteristics
3
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
10V
3.5
VGS=4.5V
1
1
8V
4
7V
TYPICAL CHARACTERISTICS
6V
4.5
VGS=10V
10
10
5
5.5
VGS
5V
4V
3V
4.5V
3.5V
6
100
100
6.5
101
100
100
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
Source-Drain Diode Forward Voltage
1
1
-100
0.1
0.2
Normalised R
+150°C
V
Tj - Junction Temperature (°C)
V
0.4
-50
DS
SD
Output Characteristics
- Drain-Source Voltage (V)
- Source-Drain Voltage (V)
v Temperature
0.6
1
0
ZXM62N03E6
10V 8V 7V 6V
DS(on)
0.8
50
T=150°C
T=25°C
VGS(th)
RDS(on)
100
and V
1.0
10
VGS=VDS
ID=250uA
VGS=10V
ID=2.2A
150
1.2
GS(th)
VGS
5V
4V
3V
4.5V
3.5V
100
200
1.4