ZXM62N03E6TA Diodes Zetex, ZXM62N03E6TA Datasheet - Page 2

• Manufacturer Part Number: ZXM62N03E6TA
• Description: MOSFET N-CH 30V 3.2A SOT-23-6
• Manufacturer: Diodes Zetex

Specifications of ZXM62N03E6TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 9.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: ZXM62N03E6TR

ZXM62N03E6
ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
PROVISIONAL ISSUE A - MAY 1999
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
A
A
=25°C (a)
=25°C (b)
(V
GS
GS
=10V; T
=10V; T
A
A
=25°C)(b)
=70°C)(b)
SYMBOL
V
V
I
I
I
I
P
P
98
D
DM
S
SM
SYMBOL
R
R
D
D
DSS
GS
JA
JA
VALUE
LIMIT
13.6
113
3.2
2.6
2.1
1.1
8.8
1.7
30
18
18
73
20
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
W
W
A
A
A
A
V
V