IRF820S Vishay, IRF820S Datasheet - Page 6
![MOSFET N-CH 500V 2.5A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
IRF820S
Manufacturer Part Number
IRF820S
Description
MOSFET N-CH 500V 2.5A D2PAK
Manufacturer
Vishay
Datasheet
1.IRF820S.pdf
(8 pages)
Specifications of IRF820S
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
360pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF820S
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRF820S, SIHF820S
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
10 V
G
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
91060_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
500
400
300
200
100
0
25
V
DD
Starting T
+
= 50 V
-
V
50
DD
J
, Junction Temperature (°C)
75
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
125
V
I
AS
12 V
DS
V
Fig. 13b - Gate Charge Test Circuit
1.1 A
1.6 A
2.5 A
GS
Same type as D.U.T.
I
D
Current regulator
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S-83030-Rev. A, 19-Jan-09
Document Number: 91060
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS