IRF820S Vishay, IRF820S Datasheet - Page 2
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IRF820S
Manufacturer Part Number
IRF820S
Description
MOSFET N-CH 500V 2.5A D2PAK
Manufacturer
Vishay
Datasheet
1.IRF820S.pdf
(8 pages)
Specifications of IRF820S
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
360pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF820S
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRF820S, SIHF820S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
GS
GS
R
= 25 °C, I
DS
T
G
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= 10 V
= 10 V
= 18 Ω, R
= 25 °C, I
= 400 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DD
TEST CONDITIONS
DS
DS
DS
GS
-
-
-
= 500 V, V
= 250 V, I
F
= V
= 50 V, I
= 0 V, I
V
V
= 2.1 A, dI/dt = 100 A/µs
V
GS
D
DS
S
GS
I
GS
GS
D
= 100 Ω, see fig. 10
= 2.5 A, V
= ± 20 V
, I
= 25 V,
= 2.1 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 µA
D
= 250 µA
I
GS
= 1.5 A
D
= 2.1 A,
= 1.5 A
D
= 0 V
GS
= 1 mA
J
DS
G
= 125 °C
G
= 0 V
b
= 400 V,
b
MAX.
D
S
b
b
D
S
2.5
b
62
40
b
MIN.
500
2.0
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S-83030-Rev. A, 19-Jan-09
Document Number: 91060
TYP.
0.59
0.70
360
260
8.0
8.6
4.5
7.5
92
37
33
16
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
S
250
520
4.0
3.0
3.3
2.5
8.0
1.6
1.4
25
24
13
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V