IRF720S Vishay, IRF720S Datasheet - Page 5

• Manufacturer Part Number: IRF720S
• Description: MOSFET N-CH 400V 3.3A D2PAK
• Manufacturer: Vishay

Specifications of IRF720S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 410pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF720S

Document Number: 91044
S-82998-Rev. A, 12-Jan-09
91044_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
91044_11
10
0.1
10
-2
50
1
T
10
C
, Case Temperature (°C)
-5
0 − 0.5
0.2
0.1
0.05
0.02
0.01
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
-4
Single Pulse
(Thermal Response)
125
150
10
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
IRF720S, SiHF720S
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
1
j
= P
D.U.T.
P
DM
DM
Vishay Siliconix
R
D
x Z
t
d(off)
t
1
1
thJC
/t
2
t
+ T
t
2
f
+
-
C
www.vishay.com
10
V
DD
5