IRF720S Vishay, IRF720S Datasheet

MOSFET N-CH 400V 3.3A D2PAK

IRF720S

Manufacturer Part Number
IRF720S
Description
MOSFET N-CH 400V 3.3A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF720S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.8 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
410pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF720S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF720S
Manufacturer:
IR
Quantity:
5 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91044
S-82998-Rev. A, 12-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 3.3 A, dI/dt ≤ 65 A/µs, V
= 50 V, starting T
G D
(Ω)
D
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 30 mH, R
c
a
DD
b
V
≤ V
GS
e
= 10 V
DS
G
, T
N-Channel MOSFET
J
e
Single
≤ 150 °C.
400
3.3
20
11
G
D
IRF720SPbF
SiHF720S-E3
IRF720S
SiHF720S
= 25 Ω, I
D
S
2
PAK (TO-263)
C
Power MOSFET
= 25 °C, unless otherwise noted
V
1.8
GS
AS
at 10 V
= 3.3 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
2
PAK (TO-263) is suitable for high current applications
2
PAK (TO-263) is a surface mount power package
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
D
IRF720STRRPbF
SiHF720STR-E3
-
-
2
PAK (TO-263)
IRF720S, SiHF720S
design,
- 55 to + 150
LIMIT
0.025
300
± 20
0.40
400
190
3.3
2.1
3.3
5.0
3.1
4.0
13
50
low
a
a
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

Related parts for IRF720S

IRF720S Summary of contents

Page 1

... PAK (TO-263) IRF720SPbF SiHF720S-E3 IRF720S SiHF720S = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 3.3 A (see fig. 12 ≤ 150 °C. J IRF720S, SiHF720S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263) a IRF720STRRPbF a SiHF720STR- SYMBOL LIMIT V 400 DS V ± 3 2 ...

Page 2

... IRF720S, SiHF720S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... DS , 91044_02 Fig Typical Output Characteristics, T Document Number: 91044 S-82998-Rev. A, 12-Jan-09 4 µs Pulse Width ° 91044_03 = 25 ° µs Pulse Width T = 150 ° 91044_04 = 150 °C C IRF720S, SiHF720S Vishay Siliconix 2 10 ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...

Page 4

... IRF720S, SiHF720S Vishay Siliconix 1000 MHz iss 800 rss oss ds 600 C iss 400 C oss C 200 rss Drain-to-Source Voltage ( 91044_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 3 200 Total Gate Charge (nC) 91044_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted 91044_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91044 S-82998-Rev. A, 12-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF720S, SiHF720S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF720S, SiHF720S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91044_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 500 Top ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF720S, SiHF720S Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords