SPA17N80C3 Infineon Technologies, SPA17N80C3 Datasheet
SPA17N80C3
Specifications of SPA17N80C3
SPA17N80C3IN
SPA17N80C3X
SPA17N80C3XK
SPA17N80C3XTIN
SPA17N80C3XTIN
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Related parts for SPA17N80C3
SPA17N80C3 Summary of contents
Page 1
... Avalanche current, repetitive t Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation 25°C C Operating and storage temperature Rev. 2 220 Ordering Code Q67040-S4353 jmax 2) limited jmax limited jmax Page 1 SPP17N80C3 SPA17N80C3 DS(on PG-TO220-3-31 PG-TO220 P-TO220-3-31 Marking 17N80C3 17N80C3 Symbol Value SPP SPA ...
Page 2
... I =800V, V =0V, V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =11A V DS(on =25° =150° f=1MHz, open drain R G Page 2 SPP17N80C3 SPA17N80C3 Value Unit 50 V/ns Values Unit min. typ. max 0 260 °C Values Unit min. typ. max. ...
Page 3
... =17A =4.7Ω, T =125° d(off =640V, I =17A =640V, I =17A 10V =640V, I =17A V D (plateau) DD Page 3 SPP17N80C3 SPA17N80C3 Values min. typ. max 2320 - 1250 - 124 - 25 =0/10V 177 - while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V ...
Page 4
... Unit Symbol SPA 0.00812 K/W C th1 0.016 C th2 0.031 C th3 0.16 C th4 0.324 C th5 2.522 C th6 th1 th th1 th2 th,n Page 4 SPP17N80C3 SPA17N80C3 Values min. typ 550 = 1200 Value SPP SPA 0.0003562 0.0003562 0.001337 0.001337 0.001831 0.001831 0.005033 0.005033 0.012 0.008657 ...
Page 5
... W 200 180 160 140 120 100 Safe operating area parameter : =25° 0.001 0. 0 Rev. 2.6 2 Power dissipation FullPAK = tot °C 100 120 160 Safe operating area FullPAK parameter Page 5 SPP17N80C3 SPA17N80C3 ) 100 120 ) DS = 25° 0.001 0. 0 °C 160 2007-08-30 ...
Page 6
... parameter µ Rev. 2.6 6 Transient thermal impedance FullPAK Z thJC parameter 0.01 single pulse Typ. output characteristic parameter 20V A 10V Page 6 SPP17N80C3 SPA17N80C3 = 0.01 -3 single pulse - =150° µ 20V 10V 2007-08- 6.5V 6V 5. ...
Page 7
... Rev. 2.6 10 Drain-source on-state resistance R DS(on) parameter : 10V 20V Typ. gate charge V DS(on)max GS parameter: I 25°C 150° Page 7 SPP17N80C3 SPA17N80C3 = SPP17N80C3 1.6 Ω 1.2 1 0.8 0.6 0.4 98% typ 0.2 0 -60 - 100 = Gate = 17 A pulsed D SPP17N80C3 0 max 0 100 °C 180 ...
Page 8
... Rev. 2.6 14 Avalanche SOA par 2 Drain-source breakdown voltage V (BR)DSS 980 940 920 900 880 860 840 820 800 780 760 740 720 100 °C 150 T j Page 8 SPP17N80C3 SPA17N80C3 ) AR ≤ 150 ° =125° (START SPP17N80C3 V -60 - 100 =25°C j (START) ...
Page 9
... Typ. C stored energy oss E =f(V ) oss DS 18 µ 100 200 300 400 Rev. 2.6 18 Typ. capacitances parameter 500 600 V 800 V DS Page 9 SPP17N80C3 SPA17N80C3 ) DS =0V, f=1 MHz iss oss rss 100 200 300 400 500 600 V 800 V DS 2007-08-30 ...
Page 10
... Definition of diodes switching characteristics Rev. 2.6 Page 10 SPP17N80C3 SPA17N80C3 2007-08-30 ...
Page 11
... PG-TO220-3-1, PG-TO220-3-21 Rev. 2.6 Page 11 SPP17N80C3 SPA17N80C3 2007-08-30 ...
Page 12
... PG-TO220-3-31 (FullPAK) Rev. 2.6 Page 12 SPP17N80C3 SPA17N80C3 2007-08-30 ...
Page 13
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.6 Page 13 SPP17N80C3 SPA17N80C3 2007-08-30 ...