IPP048N12N3 G Infineon Technologies, IPP048N12N3 G Datasheet - Page 4
![MOSFET N-CH 120V 100A TO220-3](/photos/29/5/290581/to220_sml.jpg)
IPP048N12N3 G
Manufacturer Part Number
IPP048N12N3 G
Description
MOSFET N-CH 120V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP048N12N3_G.pdf
(9 pages)
Specifications of IPP048N12N3 G
Package / Case
TO-220-2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
120V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 230µA
Gate Charge (qg) @ Vgs
182nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 60V
Power - Max
300W
Mounting Type
Through Hole
Gate Charge Qg
137 nC
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.8 mOhms
Forward Transconductance Gfs (max / Min)
162 S, 81 S
Drain-source Breakdown Voltage
120 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPP048N12N3GXK