IPB200N25N3 G Infineon Technologies, IPB200N25N3 G Datasheet - Page 6

• Manufacturer Part Number: IPB200N25N3 G
• Description: MOSFET N-CH 250V 64A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB200N25N3 G

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 64A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 7100pF @ 100V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 122 S, 61 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 64 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB200N25N3 G; IPB200N25N3 GTR

Rev. 2.3
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
70
60
50
40
30
20
10
0
DS
=f(T
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=64 A; V
Coss
Crss
40
20
GS
=10 V
V
T
DS
j
60
98%
80
[°C]
[V]
Ciss
typ
100
120
140
180
160
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
4
3
2
1
0
SD
3
2
1
0
-60
)
0
j
); V
D
IPB200N25N3 G
j
GS
-20
=V
0.5
175 °C
DS
20
V
T
270 µA
SD
j
60
[°C]
1
2700 µA
[V]
175°C, 98%
25 °C
25°C, 98%
IPP200N25N3 G
IPI200N25N3 G
100
1.5
140
2010-10-19
180
2