IPI60R125CP Infineon Technologies, IPI60R125CP Datasheet - Page 7
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IPI60R125CP
Manufacturer Part Number
IPI60R125CP
Description
MOSFET N-CH 650V 25A TO-262
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Specifications of IPI60R125CP
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
3.5V @ 1.1mA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 100V
Power - Max
208W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
208000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
25A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
125mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000297355
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPI60R125CP
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 2.0
13 Typ. capacitances
C =f(V
10
10
10
10
10
10
DS
5
4
3
2
1
0
); V
0
GS
=0 V; f =1 MHz
100
Crss
Ciss
Coss
200
V
DS
[V]
300
400
500
page 7
14 Typ. Coss stored energy
E
oss
= f(V
20
16
12
8
4
0
0
DS
)
100
200
V
DS
300
[V]
400
IPI60R125CP
500
2007-11-20
600