IPP60R125CP Infineon Technologies, IPP60R125CP Datasheet

no-image

IPP60R125CP

Manufacturer Part Number
IPP60R125CP
Description
MOSFET N-CH 650V 25A TO-220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPP60R125CP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
3.5V @ 1.1mA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 100V
Power - Max
208W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
25A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
125mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.125 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
208 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPP60R125CPX
IPP60R125CPXK
SP000088488

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP60R125CP
Manufacturer:
ST
Quantity:
9 000
Part Number:
IPP60R125CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IPP60R125CP
Quantity:
102
Company:
Part Number:
IPP60R125CP
Quantity:
40
Rev. 2.2
Features
• Lowest figure-of-merit R
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
CoolMOS
Type
IPP60R125CP
TM
Power Transistor
2)
Package
PG-TO220
j
=25 °C, unless otherwise specified
ON
xQ
AR
AR
g
1)
2),3)
2),3)
for target applications
Symbol Conditions
Ordering Code
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
j
AS
AR
GS
tot
, T
SP000088488
stg
T
T
T
I
I
V
static
AC (f >1 Hz)
T
M3 and M3.5 screws
D
D
page 1
C
C
C
C
DS
=11 A, V
=11 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...480 V
DD
DD
=50 V
=50 V
Product Summary
V
R
Q
DS
DS(on),max
g,typ
Marking
6R125P
@ T
j,max
-55 ... 150
Value
708
±20
±30
208
1.2
25
16
82
11
50
60
PG-TO220
IPP60R125CP
0.125 Ω
650
53
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
V
nC
2007-08-28

Related parts for IPP60R125CP

IPP60R125CP Summary of contents

Page 1

... Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse = = 2 2), =0...480 static >1 Hz =25 °C tot stg M3 and M3.5 screws page 1 IPP60R125CP @ T 650 DS j,max 0.125 Ω DS(on),max 53 g,typ PG-TO220 Marking 6R125P Value 708 1 ±20 ±30 208 -55 ... 150 Unit V/ °C Ncm 2007-08-28 ...

Page 2

... GS(th =600 DSS T =25 ° =600 =150 ° = GSS = = DS(on) T =25 ° = = =150 ° MHz, open drain G page 2 IPP60R125CP Value Unit V/ns Values Unit min. typ. max 0.6 K 260 °C 600 - - V 2 µ 100 nA 0.125 Ω - 0.11 - 0.30 - Ω - 2.1 ...

Page 3

... D t =3.3 Ω R d(off =400 plateau = =25 ° =400 /dt =100 A/µ rrm =400V, V < <T , identical low side and high side switch. peak (BR)DSS j jmax oss oss page 3 IPP60R125CP Values min. typ. max. - 2500 - - 120 - - 110 - - 300 - - 5 0.9 1.2 - 430 - , * while V ...

Page 4

... P parameter: D 0.5 0 0.1 0.05 0.02 0.01 single pulse - Rev. 2.2 2 Safe operating area I =f parameter 120 160 10 [° Typ. output characteristics I =f parameter: V 120 105 [s] p page 4 IPP60R125CP ); T =25 ° limited by on-state resistance 10 µs 100 µ [ =25 ° µ 2007-08-28 ...

Page 5

... T Rev. 2.2 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 0.4 5 0.2 4 Typ. transfer characteristics I =f parameter: T 120 80 40 typ 0 60 100 140 180 0 [°C] j page 5 IPP60R125CP ); T =150 ° 5 [ |>2 DS(on)max j C ° [ °150 10 2007-08-28 ...

Page 6

... Forward characteristics of reverse diode I =f parameter 120 V 400 [nC] 12 Drain-source breakdown voltage V =f(T BR(DSS) 700 660 620 580 540 100 140 180 -60 [°C] j page 6 IPP60R125CP j 25 °C, 98% 150 °C, 98% 25 °C 150 °C 0.5 1 1 =0. - 100 140 T [° 180 2007-08-28 ...

Page 7

... Typ. capacitances C =f MHz Ciss Coss 1 10 Crss 100 200 V Rev. 2.2 14 Typ. Coss stored energy E = f(V oss 300 400 500 0 [V] DS page 7 IPP60R125CP ) 100 200 300 400 500 V [V] DS 600 2007-08-28 ...

Page 8

... Definition of diode switching characteristics Rev. 2.2 page 8 IPP60R125CP 2007-08-28 ...

Page 9

... PG-TO220-3-1/TO-220-3-21: Outlines Dimensions in mm/inches: Rev. 2.2 page 9 IPP60R125CP 2007-08-28 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 10 IPP60R125CP 2007-08-28 ...

Related keywords