SPA11N80C3 Infineon Technologies, SPA11N80C3 Datasheet

MOSFET N-CH 800V 11A TO220FP

SPA11N80C3

Manufacturer Part Number
SPA11N80C3
Description
MOSFET N-CH 800V 11A TO220FP
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of SPA11N80C3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 7.1A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.9V @ 680µA
Gate Charge (qg) @ Vgs
85nC @ 10V
Input Capacitance (ciss) @ Vds
1600pF @ 100V
Power - Max
41W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
450mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature
RoHS Compliant
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.45 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
41 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000216320
SPA11N80C3IN
SPA11N80C3X
SPA11N80C3XK
SPA11N80C3XTIN
SPA11N80C3XTIN

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Rev. 2.9
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute)
CoolMOS
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
CoolMOS
Type
SPA11N80C3
TM
TM
800V designed for:
Power Transistor
2)
Package
PG-TO220FP
j
=25 °C, unless otherwise specified
AR
AR
1)
2),3)
2),3)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
Marking
11N80C3
j
AS
AR
GS
tot
, T
stg
T
T
T
I
I
V
static
AC (f >1 Hz)
T
M2.5 screws
D
D
page 1
C
C
C
C
DS
=2.2 A, V
=11 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0…640 V
DD
DD
=50 V
Product Summary
V
R
Q
=50 V
DS
DS(on)max
g,typ
@ T
j
= 25°C
-55 ... 150
Value
470
±20
±30
7.1
0.2
11
33
11
50
41
50
SPA11N80C3
0.45
800
64
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
V
nC
2008-10-15

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SPA11N80C3 Summary of contents

Page 1

... Marking 11N80C3 Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse =2 = 2 2), =0…640 static >1 Hz =25 °C tot stg M2.5 screws page 1 SPA11N80C3 800 25°C 0.45 Ω Value Unit 11 A 7.1 33 470 mJ 0 V/ns ±20 V ± -55 ... 150 °C 50 Ncm 2008-10-15 ...

Page 2

... GS(th =800 DSS T =25 ° =800 =150 ° = GSS = =7 DS(on) T =25 ° = =7 =150 ° MHz, open drain G page 2 SPA11N80C3 Value Unit V/ns Values Unit min. typ. max 3.7 K 260 °C 800 - - V - 870 - 2 µA - 100 - - - 100 nA Ω - 0.39 0.45 - 1.05 - Ω ...

Page 3

... R =7.5 Ω 25°C d(off =640 plateau = =25 ° =400 = /dt =100 A/µ rrm < <T , identical low side and high side switch peak (BR)DSS j jmax while V oss DS while V oss DS page 3 SPA11N80C3 Values Unit min. typ. max. - 1600 - 140 - - 5 1 550 - µ * rising from 0 to 80% V DSS ...

Page 4

... Rev. 2.9 2 Safe operating area I =f parameter 100 125 150 [° Typ. output characteristics I =f parameter [s] p page 4 SPA11N80C3 ); T =25 ° limited by on-state resistance 10 µs 100 µ 100 V [ =25 °C; t =10 µ µs 1000 25 2008-10-15 ...

Page 5

... T Rev. 2.9 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 1.6 5.5 V 1.4 1 Typ. transfer characteristics I =f parameter typ 100 140 180 0 [°C] j page 5 SPA11N80C3 ); T =150 ° 6 4 [A] D |>2 =10 µ DS(on)max °C 150 ° [ 2008-10-15 ...

Page 6

... F SD parameter 160 V 640 [nC] 12 Drain-source breakdown voltage V =f(T BR(DSS) 960 920 880 840 800 760 720 680 -60 100 125 150 [°C] j page 6 SPA11N80C3 =10 µ 150°C (98%) 25 °C 150 °C 25°C (98°C) 0.5 1 1 =0. - 100 140 T [° 180 2008-10-15 ...

Page 7

... Typ. capacitances C =f MHz Ciss Coss 1 10 Crss 100 200 300 V Rev. 2.9 14 Typ. Coss stored energy E = f(V oss 400 500 600 700 800 0 [V] DS page 7 SPA11N80C3 ) 100 200 300 400 500 600 700 V [V] DS 800 2008-10-15 ...

Page 8

... Definition of diode switching characteristics Rev. 2.9 page 8 SPA11N80C3 2008-10-15 ...

Page 9

... PG-TO220FP: Outline Dimensions in mm/inches Rev. 2.9 page 9 SPA11N80C3 2008-10-15 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.9 page 10 SPA11N80C3 2008-10-15 ...

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