IPA60R125C6 Infineon Technologies, IPA60R125C6 Datasheet - Page 8

• Manufacturer Part Number: IPA60R125C6
• Description: MOSFET N-CH 600V 30A TO220-FP
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPA60R125C6

• Package / Case: TO-220FP
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 3.5V @ 960µA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 2127pF @ 100V
• Power - Max: 34W
• Mounting Type: Through Hole
• Gate Charge Qg: 96 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.125 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 34 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.11ohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-220FP
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPA60R125C6XK