IPI80N04S2-04 Infineon Technologies, IPI80N04S2-04 Datasheet - Page 2
![MOSFET N-CH 40V 80A TO262-3](/photos/16/8/160899/to262_sml.jpg)
IPI80N04S2-04
Manufacturer Part Number
IPI80N04S2-04
Description
MOSFET N-CH 40V 80A TO262-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB80N04S2-04.pdf
(8 pages)
Specifications of IPI80N04S2-04
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
5300pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.7 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000219058
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPI80N04S2-04
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
DSS
GSS
DS(on)
(BR)DSS
GS(th)
thJC
thJA
thJA
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
SMD version
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
page 2
=V
=40 V, V
=40 V, V
=0 V, I
=20 V, V
=10 V, I
=10 V, I
2
Conditions
cooling area
GS
, I
2)
D
D
= 1 mA
D
D
=250 µA
GS
GS
DS
=80 A,
=80 A,
=0 V,
=0 V,
=0 V
5)
IPP80N04S2-04, IPI80N04S2-04
min.
2.1
40
-
-
-
-
-
-
-
-
-
Values
0.01
typ.
3.0
2.9
2.6
1
1
-
-
-
-
-
IPB80N04S2-04
max.
100
100
0.5
4.0
3.7
3.4
62
62
40
1
-
2006-03-02
Unit
K/W
V
µA
nA
mΩ