IPI05CN10N G Infineon Technologies, IPI05CN10N G Datasheet - Page 3
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IPI05CN10N G
Manufacturer Part Number
IPI05CN10N G
Description
MOSFET N-CH 100V 100A TO262-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Specifications of IPI05CN10N G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.4 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
181nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 50V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
4.1mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Configuration
Single
Resistance Drain-source Rds (on)
0.0054 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000208922
SP000680664
SP000680664
Parameter
Dynamic characteristics
Reverse Diode
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
V
Q
I
I
V
t
Q
V
f
V
I
V
V
V
T
V
T
V
i
t
R
V
I
I
V
I
V
I
IPB05CN10N G
min.
Values
typ.
IPP05CN10N G
IPI05CN10N G
max.
Unit